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AOB411L
Electrical Characteristics (T J =25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
STATIC PARAMETERS
BV DSS
Drain-Source Breakdown Voltage
I D =-250 μ A, V GS =0V
-60
V
I DSS
I GSS
Zero Gate Voltage Drain Current
Gate-Body leakage current
V DS =-60V, V GS =0V
V DS =0V, V GS = ±20V
T J =55°C
-1
-5
±100
μ A
nA
V GS(th)
I D(ON)
R DS(ON)
Gate Threshold Voltage
On state drain current
Static Drain-Source On-Resistance
V DS =V GS I D =-250 μ A
V GS =-10V, V DS =-5V
V GS =-10V, I D =-20A
T J =125°C
-1.5
-230
-2
13.5
20.5
-2.5
16.5
25
V
A
m ?
V GS =-4.5V, I D =-20A
17
22
m ?
g FS
Forward Transconductance
V DS =-5V, I D =-20A
48
S
V SD
Diode Forward Voltage
I S =-1A,V GS =0V
-0.7
-1
V
I S
Maximum Body-Diode Continuous Current G
-105
A
DYNAMIC PARAMETERS
C iss
Input Capacitance
4260
5330
6400
pF
C oss
C rss
R g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
V GS =0V, V DS =-30V, f=1MHz
V GS =0V, V DS =0V, f=1MHz
335
140
1.4
483
234
2.8
630
330
4.2
pF
pF
?
SWITCHING PARAMETERS
Q g (10V)
Total Gate Charge
65
83
100
nC
Q g (4.5V)
Q gs
Total Gate Charge
Gate Source Charge
V GS =-10V, V DS =-30V, I D =-20A
35
40
15
50
nC
nC
Q gd
t D(on)
Gate Drain Charge
Turn-On DelayTime
18
17.5
nC
ns
t r
t D(off)
t f
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
V GS =-10V, V DS =-30V, R L =1.5 ? ,
R GEN =3 ?
20
83.5
37
ns
ns
ns
t rr
Body Diode Reverse Recovery Time
I F =-20A, dI/dt=500A/ μ s
18
27
36
ns
Q rr
Body Diode Reverse Recovery Charge I F =-20A, dI/dt=500A/ μ s
110
165
215
nC
A. The value of R θ JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
Power dissipation P DSM is based on R θ JA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation P D is based on T J(MAX) =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =175°C. Ratings are based on low frequency and duty cycles to keep initial
T J =25°C.
D. The R θ JA is the sum of the thermal impedance from junction to case R θ JC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 μ s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T J(MAX) =175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Mar. 2011
www.aosmd.com
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相关代理商/技术参数
AOB411L_001
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功能描述:MOSFET N-CH 100V 8.2A TO263 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SDMOS™ 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
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AOB414_001
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AOB414L
制造商:Alpha & Omega Semiconductor 功能描述:
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AOB416_09
制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:100V N-Channel MOSFET
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制造商:AOSMD 制造商全称:Alpha & Omega Semiconductors 功能描述:N-Channel Enhancement Mode Field Effect Transistor